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MP04HB910 датащи(PDF) 3 Page - Dynex Semiconductor

номер детали MP04HB910
подробное описание детали  Dual Rectifier Diode Module Preliminary Information
PDF  7 Pages
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производитель  DYNEX [Dynex Semiconductor]
домашняя страница  http://www.dynexsemi.com
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MP04HB910 датащи(HTML) 3 Page - Dynex Semiconductor

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MP04HB910
Note 1:
The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in
the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to
the impedance of the busbars from the terminals to the semiconductor.
CHARACTERISTICS
Peak reverse current
Parameter
µC
1600
At T
vj = 150˚C
-
Q
S
Total stored charge
I
F = 1000A, dIRR/dt = 3A/µs
T
case = 150˚C, VR = 100V
Symbol
I
RRM
I
RR
Peak recovery current
V
TO
Threshold voltage. See Note 1.
r
T
Slope resistance. See Note 1.
0.29
m
Ω
At T
vj = 150˚C
-
0.7
V
-85
A
-
At V
RRM, Tcase = 150
oC-
50
mA
Conditions
Min.
Max.
Units
CURVES
Fig.3 Maximum (limit) forward characteristics
0.5
0.75
1.0
1.5
1.25
Instantaneous forward voltage VF - (V)
0
500
1000
1500
2000
2500
Measured under pulse
conditions
Tj = 25˚C
Tj = 150˚C
Fig.4 Power dissipation curves
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0
200
400
600
800
1000 1200 1400 1600 1800
Forward current, (Average, per arm) IF(AV) - (A)
30°
60°
90°
120°
180°
DC



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