2SC5409 datasheet(1/8 Pages) NEC

номер детали	2SC5409

подробное описание детали	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

PDF	8 Pages

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производитель	NEC [NEC]

домашняя страница	http://www.nec.com/

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©

1997

PRELIMINARY DATA SHEET

FEATURE

•

High fT

16 GHz TYP.

•

High gain

|S21e|2 = 14 dB TYP.

@f = 2 GHz, VCE = 2 V, IC = 20 mA

•

NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA

•

6-pin Small Mini Mold Package

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

2SC5409-T1

3 kpcs/reel

8-mm wide emboss taping, 6-pin

(collector) feed hole direction

Remark

To order evaluation samples, consult your NEC sales person-

nel (supported in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

PT

90

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

SILICON TRANSISTOR

2SC5409

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE HIGH-GAIN AMPLIFICATION

Document No. P12096EJ1V0DS00 (1st edition)

Date Published April 1997 N

Printed in Japan

2.1±0.1

1.25±0.1

PACKAGE DIMENSIONS (in mm)

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

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