2SC3604 датащи(PDF) - New Jersey Semi-Conductor Products, Inc.

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2SC3604 датащи (PDF) - New Jersey Semi-Conductor Products, Inc.

2SC3604 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.


номер детали	2SC3604

скачать	2SC3604 скачать

объем файла	198.04 Kbytes

Page	2 Pages

производитель	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

домашняя страница	http://www.njsemi.com

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подробное описание детали

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

2SC3604 Datasheet (PDF)

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2SC3604 Datasheet PDF - New Jersey Semi-Conductor Products, Inc.


номер детали	2SC3604

скачать	2SC3604 Click to download

объем файла	198.04 Kbytes

Page	2 Pages

производитель	NJSEMI [New Jersey Semi-Conductor Products, Inc.]

домашняя страница	http://www.njsemi.com

Logo

подробное описание детали	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

2SC3604 датащи (HTML) - New Jersey Semi-Conductor Products, Inc.

2SC3604 Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc.

2SC3604 Datasheet HTML 2Page - New Jersey Semi-Conductor Products, Inc.

2SC3604 Информация о продукте

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 12 dB TYP. @ f = 2.0 GHz

Аналогичный номер детали - 2SC3604

производитель	номер детали	датащи	подробное описание детали
NEC	2SC3604	94Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3604	218Kb / 10P	SILICON TRANSISTOR 1996

Аналогичное описание - 2SC3604

производитель	номер детали	датащи	подробное описание детали
NEC	2SC3587	91Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3603	89Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3604	94Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5185	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5369	72Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION
California Eastern Labs	2SC3356	1Mb / 9P	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
eleflow technologies co...	2SC3603	222Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

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