2SC5369 datasheet(1/12 Pages) NEC

номер детали	2SC5369

подробное описание детали	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION

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2SC5369

SILICON TRANSISTOR

Document No. P11644EJ1V0DS00 (1st edition)

Date Published September 1996 P

Printed in Japan

FEATURES

• High fT

14 GHz TYP.

• High gain

| S21e | 2 = 14 dB TYP.

@f = 2 GHz, VCE = 3 V, IC = 10 mA

• NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA

• 6-pin small mini mold package

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

6V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

PT

150

mW

Junction Temperature

TI

150

°C

Storage Temperature

Tstg

–65 to +150

°C

PACKAGE DIMENSION (in mm)

PIN CONNECTIONS

1. Emitter

4. Emitter

2. Emitter

5. Emitter

3. Base

6. Collector

NPN EPITAXIAL SILICON TRANSISTOR FOR

MICROWAVE AMPLIFICATION

©

1996

PRELIMINARY DATA SHEET

2.1±0.1

1.25±0.1

Аналогичный номер детали - 2SC5369

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	2SC5369	294Kb / 14P	SILICON TRANSISTOR 1996

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