GP801DDS18

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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www.dynexsemi.com

FEATURES

s

Low V

CE(SAT)

s

Non Punch Through Silicon

s

Isolated Copper Baseplate

s

Low Inductance Internal Construction

s

800A Per Arm

APPLICATIONS

s

High Reliability Inverters

s

Motor Controllers

s

Traction Drives

s

Resonant Converters

The Powerline range of high power modules includes dual

and single switch configurations covering voltages from 600V to

3300V and currents up to 4800A.

The GP801DDS18 is a dual switch 1800V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module.

Designed with low V

CE(SAT)

to minimise conduction

losses, the module is of particular relevance in low to medium

frequency applications. The IGBT has a wide reverse bias safe

operating area (RBSOA) ensuring reliability in demanding

applications.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP801DDS18

Note: When ordering, please use the whole part number.

KEY PARAMETERS

V

CES

1800V

V

CE(sat)

(typ)

2.6V

I

C

(max)

800A

I

C(PK)

(max)

1600A

GP801DDS18

Dual Switch Low V

Replaces January 2000 version, DS235-3.0

DS5235-4.1 January 2001

Fig. 1 Dual switch circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: D

(See package details for further information)

3(C

4(E

2(C

1(E

1

3

2

4

12

11

10

7

6

5

8

9