2SC5337 datasheet(2/8 Pages) NEC

номер детали	2SC5337

подробное описание детали	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

PDF	8 Pages

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производитель	NEC [NEC]

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2SC5337

ELECTRICAL CHARACTERISTICS (TA = 25 °

°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

ICBO

VCB = 20 V, IE = 0

0.01

5.0

µA

Emitter Cutoff Current

IEBO

VEB = 2 V, IC = 0

0.03

5.0

µA

DC Current Gain

hFE

VCE = 10 V, IC = 50 mA

Note2

120

200

Insertion Power Gain

| S21e |

VCE = 10 V, IC = 50 mA, f = 1 GHz

7.0

8.3

Noise Figure 1

NF1

VCE = 10 V, IC = 50 mA, f = 500 MHz

Note3

1.5

3.5

Noise Figure 2

NF2

VCE = 10 V, IC = 50 mA, f = 1 GHz

Note3

2.0

3.5

IM2

VCE = 10 V, IC = 50 mA, RS = RL = 75

Ω

59.0

Pin = 105 dB

µV/75 Ω, f1 = 190 MHz

f2 = 90 MHz, f = f1

− f2

IM3

VCE = 10 V, IC = 50 mA, RS = RL = 75

Ω

82.0

Pin = 105 dB

µV/75 Ω, f1 = 190 MHz

f2 = 200 MHz, f = 2

× f1 − f2

Notes 2. Pulse measurement: PW

≤ 350

µS, Duty Cycle ≤ 2 %

3. RS = RL = 50

Ω, tuned

hFE Classification

Rank

Marking

hFE

40 to 80

60 to 120

100 to 200

3rd Order

Intermoduration

Distortion

2nd Order

Intermoduration

Distortion

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