2SC5337 datasheet(1/8 Pages) NEC

номер детали	2SC5337

подробное описание детали	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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DATA SHEET

Silicon Transistor

2SC5337

NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY LOW DISTORTION AMPLIFIER

1996

©

Document No. P10939EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

PRELIMINARY DATA SHEET

DESCRIPTION

The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to

UHF band, which is suitable for the CATV, tele-communication, and such.

FEATURES

PACKAGE DIMENSIONS

•

Low distortion

(in millimeters)

IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA

IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA

•

Low noise

NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz

•

New power mini-mold package version of a 4-pin type

gain-improved on the 2SC3356

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

15

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

250

mA

Total Power Dissipation

PT

Note1

2.0

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

Note 1. 0.7 mm

× 16 cm2 double sided ceramic substrate (Copper plaiting)

4.5±0.1

1.6±0.2

1.5±0.1

0.25±0.02

0.42

±0.06

0.46

±0.06

3.0

1.5

0.42

±0.06

C

EB

E

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

Аналогичный номер детали - 2SC5337

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	2SC5337	104Kb / 7P	NPN Silicon RF Transistor for High-Frequency
California Eastern Labs	2SC5337	877Kb / 6P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Technology Corp	2SC5337-A	137Kb / 2P	RF & Microwave device
Renesas Technology Corp	2SC5337-AZ	104Kb / 7P	NPN Silicon RF Transistor for High-Frequency
California Eastern Labs	2SC5337-AZ	877Kb / 6P	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

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Аналогичное описание - 2SC5337

производитель	номер детали	датащи	подробное описание детали
NEC	2SC5336	49Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	2SC5338	71Kb / 10P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	NE461M02	45Kb / 5P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
	NE856M02	63Kb / 7P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	NE856M02	206Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5336	180Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Technology Corp	2SC5338	186Kb / 10P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	2SC5336	1Mb / 7P	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
FutureWafer Tech Co.,Lt...	2SC1815	891Kb / 7P	Low Frequency Amplifier NPN Epitaxial Silicon Transistor 27-NOV-2021 V 2.0
FutureWafer Tech Co.,Lt...	2SC945	932Kb / 7P	Low Frequency Amplifier NPN Epitaxial Silicon Transistor 27-NOV-2021 V 2.0

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Аналогичный номер детали - 2SC5337

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