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GP800FSS12 датащи(PDF) 7 Page - Dynex Semiconductor

номер детали GP800FSS12
подробное описание детали  Powerline N-Channel Single Switch IGBT Module Preliminary Information
PDF  11 Pages
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производитель  DYNEX [Dynex Semiconductor]
домашняя страница  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP800FSS12 датащи(HTML) 7 Page - Dynex Semiconductor

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GP800FSS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
Fig.9 Typical turn-off energy vs collector current
Fig.10 Typical turn-off energy vs collector current
Fig.11 Typical diode reverse recovery charge vs collector current
Fig.12 Typical switching characteristics
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Collector current, IC - (A)
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
A
B
C
Conditions:
Tcase = 25˚C,
VCE = 600V,
VGE = ±15V
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Collector current, IC - (A)
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
A
B
C
Conditions:
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
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600
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Collector current, IC (A)
Conditions:
VCE = 600V,
VGE = 15V,
Rg = 3.3Ω
Tcase = 25˚C
Tcase = 125˚C
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Collector currrent, IC - (A)
td(off)
td(on)
tf
tr
Conditions:
Tcase = 125˚C,
VCE = 600V
VGE = 15V
Rg = 3.3Ω



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