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GP800FSS12 датащи(PDF) 6 Page - Dynex Semiconductor

номер детали GP800FSS12
подробное описание детали  Powerline N-Channel Single Switch IGBT Module Preliminary Information
PDF  11 Pages
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производитель  DYNEX [Dynex Semiconductor]
домашняя страница  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP800FSS12 датащи(HTML) 6 Page - Dynex Semiconductor

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GP800FSS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
6/11
CURVES
Fig.5 Typical output characteristics
Fig.6 Typical output characteristics
Fig.7 Typical turn-on energy vs collector current
Fig.8 Typical turn-on energy vs collector current
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 25˚C
1000
800
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 125˚C
1000
800
0
20
40
60
80
100
120
140
160
0
100
200
300
400
500
600
700
800
Collector current, IC - (A)
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
A
B
C
Conditions:
Tcase = 25˚C,
VCE = 600V,
VGE = ±15V
0
20
40
60
80
100
120
140
160
180
200
220
0
100
200
300
400
500
600
700
800
Collector current, IC - (A)
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
A
B
C
Conditions:
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V



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