IXYS reserves the right to change limits, test conditions, and dimensions.

IXTP 2R4N50P

IXTY 2R4N50P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

1.5

2.5

S

C

iss

240

pF

C

oss

V

31

pF

C

rss

4pF

t

d(on)

24

ns

t

r

V

29

ns

t

d(off)

R

65

ns

t

f

28

ns

Q

g(on)

6.1

nC

Q

gs

V

1.8

nC

Q

gd

2.9

nC

R

thJC

2.25

°C/W

R

thCS

(TO-220)

0.25

°C/W

Source-Drain Diode

Characteristic Values

T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

2.4

A

I

SM

Repetitive

7.0

A

V

SD

I

1.5

V

t

rr

I

400

ns

V

≤ 300 μs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

TO-220 (IXTP) Outline

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-252 AA (IXTY) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

2.19

2.38

0.086

0.094

A1

0.89

1.14

0.035

0.045

A2

0

0.13

0

0.005

b

0.64

0.89

0.025

0.035

b1

0.76

1.14

0.030

0.045

b2

5.21

5.46

0.205

0.215

c

0.46

0.58

0.018

0.023

c1

0.46

0.58

0.018

0.023

D

5.97

6.22

0.235

0.245

D1

4.32

5.21

0.170

0.205

E

6.35

6.73

0.250

0.265

E1

4.32

5.21

0.170

0.205

e

2.28 BSC

0.090 BSC

e1

4.57 BSC

0.180 BSC

H

9.40 10.42

0.370

0.410

L

0.51

1.02

0.020

0.040

L1

0.64

1.02

0.025

0.040

L2

0.89

1.27

0.035

0.050

L3

2.54

2.92

0.100

0.115

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain