IXTP2R4N50P datasheet(1/6 Pages) IXYS

номер детали	IXTP2R4N50P

подробное описание детали	PolarHVTM Power MOSFET

PDF	6 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GSM

Transient

± 40

V

GSM

Continuous

± 30

V

I

D25

T

C = 25°C

2.4

A

I

DM

T

C = 25°C, pulse width limited by TJM

4.5

A

I

AR

T

C = 25°C

2.4

A

E

AR

T

C = 25°C8

mJ

E

AS

T

C = 25°C

100

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 50 Ω

P

D

T

C = 25°C55

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

(TO-220)

1.13/10 Nm/lb.in.

Weight

TO-220

4

g

TO-252

0.8

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

500

V

GS(th)

V

DS

= V

GS, ID = 25 μA

3.0

5.5

V

I

GSS

V

GS = ± 30 V, VDS = 0 V

± 50

nA

I

DSS

V

DS

= V

DSS

1

μA

V

GS = 0 V

T

J = 125°C50

μA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25, Note 1

3.75

Ω

PolarHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

International standard packageS

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

IXTP 2R4N50P

IXTY 2R4N50P

V

DSS

= 500

V

I

D25

=

2.4

A

R

DS(on)

≤≤≤≤≤ 3.75

Ω

DS99445E(04/06)

G = Gate

D = Drain

S = Source

TAB = Drain

TO-220 (IXTP)

D

(TAB)

G

S

TO-252 AA (IXTY)

G

S

(TAB)

Аналогичный номер детали - IXTP2R4N50P

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Inchange Semiconductor ...	IXTP2R4N50P	294Kb / 2P	isc N-Channel MOSFET Transistor

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IXTP2R4N50P датащи(PDF) 1 Page - IXYS Corporation

IXTP2R4N50P датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXTP2R4N50P

Аналогичное описание - IXTP2R4N50P

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