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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L152C6 датащи(PDF) 82 Page - STMicroelectronics |
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STM32L152C6 датащи(HTML) 82 Page - STMicroelectronics |
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82 / 131 page  Electrical characteristics STM32L151x6/8/B, STM32L152x6/8/B 82/131 DocID17659 Rev 9 6.3.13 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 42 are derived from tests performed under conditions summarized in Table 13. All I/Os are CMOS and TTL compliant. Table 42. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage - - - - 0.3VDD(1) V VIH Input high level voltage Standard I/O 0.7 VDD -- FT I/O - - Vhys I/O Schmitt trigger voltage hysteresis(2) Standard I/O - 10% VDD(3) - FT I/O - 5% VDD(4) - Ilkg Input leakage current (5) VSS ≤ VIN ≤ VDD I/Os with LCD -- ±50 nA VSS ≤ VIN ≤ VDD I/Os with analog switches -- ±50 VSS ≤ VIN ≤ VDD I/Os with analog switches and LCD -- ±50 VSS ≤ VIN ≤ VDD I/Os with USB -- TBD FT I/O VDD ≤ VIN ≤ 5V -- TBD VSS ≤ VIN ≤ VDD Standard I/Os -- ±50 RPU Weak pull-up equivalent resistor(6)(1) VIN = VSS 30 45 60 k Ω RPD Weak pull-down equivalent resistor(6) VIN = VDD 30 45 60 k Ω CIO I/O pin capacitance - - - 5 - pF 1. Tested in production 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production. 3. With a minimum of 200 mV. Based on characterization, not tested in production. 4. With a minimum of 100 mV. Based on characterization, not tested in production. 5. The max. value may be exceeded if negative current is injected on adjacent pins. 6. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order). |
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