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DS2016 датащи(PDF) 4 Page - Dallas Semiconductor

номер детали DS2016
подробное описание детали  2k x 8 3V/5V Operation Static RAM
PDF  9 Pages
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производитель  DALLAS [Dallas Semiconductor]
домашняя страница  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS2016 датащи(HTML) 4 Page - Dallas Semiconductor

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DS2016
4 of 9
+3-VOLT OPERATION
RECOMMENDED DC OPERATING CONDITIONS
(TA = -40°C to +85°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Power Supply Voltage
VCC
2.7
3.0
3.5
V
Input High Voltage
VIH
2.0
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
0.6
V
Data Retention Voltage
VDR
2.0
3.5
V
DC CHARACTERISTICS
(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Leakage Current
IIL
0V
≤ V
IN
≤ V
CC
±0.1
µA
I/O Leakage Current
ILO
CE
=VIH, 0V
≤V
IO
≤V
CC
±0.5
µA
Output High Current
IOH
VOH = 2.2V
-0.5
mA
Output Low Current
IOL
VOL = 0.4V
4.0
mA
Standby Current
ICCS1
CE
= 2.0V
0.1
mA
Standby Current
ICCS2
CE
≥V
CC-0.3V TA=60°C
500
nA
Standby Current
ICCS2
CE
≥V
CC-0.3V TA=25°C
50
nA
Operating Current
ICCO
CE
=0.6V min cycle
25
mA
AC CHARACTERISTICS READ CYCLE
(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Read Cycle Time
tRC
250
ns
Access Time
tACC
250
ns
OE
to Output Valid
tOE
120
ns
CE
to Output Valid
tCO
250
ns
CE
or OE to Output Active
tCOE
15
ns
Output High-Z
from Deselection
tOD
5
100
ns
Output Hold from
Address Change
tOH
15
ns



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