DS2016 datasheet(1/9 Pages) DALLAS

номер детали	DS2016

подробное описание детали	2k x 8 3V/5V Operation Static RAM

PDF	9 Pages

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производитель	DALLAS [Dallas Semiconductor]

домашняя страница	https://www.maximintegrated.com/en.html

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FEATURES

§ Low-power CMOS design

§ Standby current

− 50 nA max at t

A = 25°C VCC = 3.0V

− 100 nA max at t

A = 25°C VCC = 5.5V

− 1 µA max at t

A = 60°C VCC = 5.5V

§ Full operation for V

CC = 5.5V to 2.7V

§ Data retention voltage = 5.5V to 2.0V

§ Fast 5V access time

− DS2016 - 100

100 ns

− DS2016 - 150

150 ns

§ Reduced-speed 3V access time

− DS2016 - 100

250 ns

− DS2016 - 150

250 ns

§ Operating temperature range of -40°C to

+85°C

§ Full static operation

§ TTL compatible inputs and outputs over

voltage range of 5.5V to 2.7 volts.

§ Available in 24-pin DIP and 24-pin SOIC

packages

§ Suitable for both battery operated and battery

backup applications

PIN ASSIGNMENT

PIN DESCRIPTION

A0 - A10

- Address Inputs

DQ0 - DQ7

- Data Input/Output

CE

- Chip Enable Input

WE

- Write Enable Input

OE

- Output Enable Input

VCC

- Power Supply Input 2.7V - 5.5V

GND

- Ground

DESCRIPTION

The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access

memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single

power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for

device selection and can be used in order to achieve the minimum standby current mode, which facilitates

both battery operated and battery backup applications. The device provides access times as fast as 100 ns

when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns

access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the

input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where

battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8

SRAM and is pin-compatible with ROM and EPROM of similar density.

DS2016

2k x 8 3V/5V Operation Static RAM

www.dalsemi.com

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24

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14

VCC

A8

A9

WE

OE

A10

CE

DQ7

DQ6

DQ5

DQ4

DQ3

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

GND

DS2016 24-Pin DIP (600-mil)

DS2016R 24-Pin SOIC (300-mil)

Аналогичный номер детали - DS2016

производитель	номер детали	датащи	подробное описание детали
Maxim Integrated Produc...	DS2016	168Kb / 8P	2k x 8 3V/5V Operation Static RAM 032706

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Аналогичное описание - DS2016

производитель	номер детали	датащи	подробное описание детали
Sharp Corporation	LH5116	87Kb / 10P	CMOS 16K (2K x 8) Static RAM
Cypress Semiconductor	CY6116A	466Kb / 9P	2K x 8 Static RAM Monday, November 8, 1993
Cypress Semiconductor	CY7C128A	217Kb / 9P	2K x 8 Static RAM
Intersil Corporation	HM-65162883	213Kb / 9P	2K x 8 Asynchronous CMOS Static RAM March 1997
Cypress Semiconductor	CY7C128A	270Kb / 9P	2K x 8 Static RAM
	CY7C132	562Kb / 18P	2K x 8 Dual-Port Static RAM
	CY7C136	455Kb / 15P	2K x 8 Dual-Port Static RAM
	CY7C146	455Kb / 15P	2K x 8 Dual-Port Static RAM
	CY7C128A	193Kb / 10P	2K x 8 Static RAM
Maxim Integrated Produc...	DS2016	168Kb / 8P	2k x 8 3V/5V Operation Static RAM 032706

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DS2016 датащи(PDF) 1 Page - Dallas Semiconductor

DS2016 датащи(HTML) 1 Page - Dallas Semiconductor

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