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DS1075-80 датащи(PDF) 17 Page - Dallas Semiconductor |
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DS1075-80 датащи(HTML) 17 Page - Dallas Semiconductor |
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17 / 18 page ![]() DS1075 17 of 18 AC ELECTRICAL CHARACTERISTICS - CALCULATED PARAMETERS The following characteristic are derived from various device operating parameters (frequency, mode etc.). They are not specifically tested or guaranteed and may differ from the min and max limits shown by a small amount due to internal device setup times and propagation delays. However, the equations in the max column can be used to estimate a more accurate idea of typical device performance than the guaranteed values. PARAMETER SYMBOL CONDITION MIN MAX OUT ↑ = from OE ↑= ten tM 2tM OUT ↓ O from OE ↓ N = 1 N ≥ 2 tdistdis tOUTH 0 tOUTH + tM tOUTH SELX ↓ to OUT0 ↑ -Internal to External -External to Internal tSIEtSEI tI /2 tI /2 3tI /2 + tE 3tI /2 + tEhigh Break during SEL switch -Internal to External -External to Internal tLOWtLOW tI /2 tI /2 tI /2 + tE 3tI /2 + tElow PDN ↓ to IN/OUT Hi-Z N = 1 N ≥ 2 tpdntpdn tOUTH 0 tOUTH + tM tOUTH PDN ↓ to OUT0 Hi-Z N = 1 N ≥ 2 tpdntpdn tOUTH 0 tOUTH + tM tOUTH PDN ↑ = to OUT↑ = tstab 256tM PDN ↑ = to OUT0 ↑= tstab 256tM OUT↑ = after Power-Up 256tM OUT0↑ after Power-Up 256tM |
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