Conversion Guide: P33 130nm to 65nm

Application Note

Sep 2008

10

Order Number: 320005-04

4.3

DC Current Specification

The P33 65nm device consumes higher power than the P33 130nm device in standby

mode under MAX condition.

Table 4:

Key AC Write-Erase Specification Comparison

Features / Specifications

P33 130nm

P33 65nm

Program Performance

Program Buffer Size

64 Bytes

1024 Bytes

Single Word Program Time (typ/max)

90/200 µs

150/456 µs

Aligned 32-word Buffered Program Time (typ)

364 KBytes/s

Aligned 64-word Buffered Program Time (typ)

—

593 KBytes/s

Aligned 128-word Buffered Program Time (typ)

—

941 KBytes/s

Aligned 256-word Buffered Program Time (typ)

—

1.29 MBytes/s

Aligned 512-word Buffered Program Time (typ)

—

1.46 MBytes/s

BEFP Environment Requirement

25 °C +/- 5 °C

100 P/E cycles

30 °C +/- 10 °C

50 P/E cycles

BEFP Time

188KB/s

2.0MB/s

Erase Performance

Erase Time - 16KW Param. Block (typ/max)

0.4/2.5 s

0.8/4.0 s

Erase Time - 64KW Main Block (typ/max)

0.8/4.0 s

0.8/4.0 s

Program/Erase Suspend Latency (typ)

20 µs

20 µs

Blank Check

No

Yes

Table 5:

Key DC Read Specification Comparison

Features / Specifications

P33 130nm

P33 65nm

DC Current Characteristics

Standby Current (typ/max)

70/195 µA (256-Mbit)

65/210 µA (256-Mbit)

Continuous Burst Read Current (max)

28 mA (52 MHz)

24 mA (52 MHz)

Program/Erase Current (typ/max)

35/50 mA

35/50 mA

VPP Factory Program Current (max)

22 mA

Less than 1 mA