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OPA656 датащи(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали OPA656
подробное описание детали  Wideband, Unity-Gain Stable, FET-Input OPERATIONAL AMPLIFIER
PDF  25 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

OPA656 датащи(HTML) 4 Page - National Semiconductor (TI)

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OPA656
4
SBOS196G
www.ti.com
ELECTRICAL CHARACTERISTICS: VS = ±5V: High Grade DC Specifications(1)
RF = 250Ω, RL = 100Ω, and G = +2, unless otherwise noted.
OPA656UB, NB (High-Grade)
TYP
MIN/MAX OVER TEMPERATURE
0
°C to
–40
°C to
MIN/
TEST
PARAMETER
CONDITIONS
+25
°C
+25
°C(2)
70
°C(3)
+85
°C(3)
UNITS
MAX LEVEL(4)
Input Offset Voltage
VCM = 0V
±0.1
±0.6
±0.85
±0.9
mV
Max
A
Input Offset Voltage Drift
VCM = 0V
±2
±6
±6
±6
µV/°CMax
A
Input Bias Current
VCM = 0V
±1
±5
±450
±1250
pA
Max
A
Input Offset Current
VCM = 0V
±0.5
±5
±450
±1250
pA
Max
A
Common-Mode Rejection Ratio (CMRR)
VCM = ±0.5V
95
88
86
84
dB
Min
A
Power-Supply Rejection Ratio (+PSRR)
+VS = 4.5V to 5.5V
78
74
72
70
dB
Min
A
(–PSRR)
–VS = –4.5V to –5.5V
68
62
60
58
dB
Min
A
NOTES: (1) All other specifications are the same as the standard-grade.
(2) Junction temperature = ambient for 25
°C min/max specifications.
(3) Junction temperature = ambient at low temperature limit: junction temperature = ambient +20
°C at high temperature limit for over temperature
min/max specifications.
(4) Test Levels: (A) 100% tested at 25
°C. Over temperature limits by characterization and simulation.



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