1

Motorola Bipolar Power Transistor Device Data

Complementary Silicon

High-Power Transistors

. . . for general–purpose power amplifier and switching applications.

• 10 A Collector Current

• Low Leakage Current — ICEO = 0.7 mA @ 60 V

• Excellent dc Gain — hFE = 40 Typ @ 3.0 A

• High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz

MAXIMUM RATINGS

Rating

Symbol

TIP33B

TIP34B

TIP33C

TIP34C

Unit

Collector–Emitter Voltage

VCEO

80 V

100 V

Vdc

Collector–Base Voltage

VCB

80 V

100 V

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak (1)

IC

10

15

Adc

Base Current — Continuous

IB

3.0

Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25

_C

PD

80

0.64

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.56

_C/W

Junction–To–Free–Air Thermal Resistance

R

θJA

35.7

_C/W

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

v 10%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (A)

0.1

1.0

5.0

10

10

20

100

500

200

50

NPN

PNP

VCE = 4.0 V

TJ = 25°C

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP33B/D

TIP33B

TIP33C

TIP34B

TIP34C

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

80 WATTS

*Motorola Preferred Device

*

NPN

*

PNP

CASE 340D–01

TO–218AC