COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

... designed for general-purpose power amplifier and switching applications.

● Collector-Emitter Sustaining Voltage -
   VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881
                      = 60 Vdc(Min) - 2N5880, 2N5882
● DC Current Gain -
   hFE = 20 (Min) @ IC = 6.0 Adc
● Low Collector-Emitter Saturation Voltage -
   VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc
● High Current - Gain Bandwidth Product -
   fT = 4.0 MHz (Min) @ IC = 1.0 Adc
● Recommended for New Circuit Designs