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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD19506KCS датащи(PDF) 1 Page - Texas Instruments |
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CSD19506KCS датащи(HTML) 1 Page - Texas Instruments |
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1 / 10 page  0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 100A TC = 125°C,I D = 100A G001 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 Qg - Gate Charge (nC) ID = 100A VDS = 40V G001 Gate (Pin 1) Drain (Pin 2) Source (Pin 3) CSD19506KCS www.ti.com SLPS481 – DECEMBER 2013 80V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD19506KCS 1 FEATURES 2 • Ultra-Low Qg and Qgd PRODUCT SUMMARY • Low Thermal Resistance TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 80 V • Avalanche Rated Qg Gate Charge Total (10 V) 120 nC • Pb-Free Terminal Plating Qgd Gate Charge Gate to Drain 20 nC • RoHS Compliant VGS = 6 V 2.2 m Ω RDS(on) Drain-to-Source On Resistance • Halogen Free VGS = 10 V 2.0 m Ω • TO-220 Plastic Package VGS(th) Threshold Voltage 2.5 V APPLICATIONS ORDERING INFORMATION Device Package Media Qty Ship • Secondary Side Synchronous Rectifier TO-220 Plastic • Motor Control CSD19506KCS Tube 50 Tube Package DESCRIPTION ABSOLUTE MAXIMUM RATINGS This 80 V, 2.0 m Ω, TO-220 NexFET™ power TA = 25°C VALUE UNIT MOSFET is designed to minimize losses in power VDS Drain-to-Source Voltage 80 V conversion applications. VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 100 Pin Out Drawing Continuous Drain Current (Silicon limited), 273 ID TC = 25°C A Continuous Drain Current (Silicon limited), 193 TC = 100°C IDM Pulsed Drain Current (1) 236 A PD Power Dissipation 375 W TJ, Operating Junction and Storage –55 to 175 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 832 mJ ID = 129 A, L = 0.1 mH, RG = 25 Ω (1) Pulse duration ≤ 300 μs, Duty cycle ≤ 1% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Аналогичный номер детали - CSD19506KCS |
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Аналогичное описание - CSD19506KCS |
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