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CSD19506KCS датащи(PDF) 4 Page - Texas Instruments

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номер детали CSD19506KCS
подробное описание детали  80V N-Channel NexFET Power MOSFETs
PDF  10 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD19506KCS датащи(HTML) 4 Page - Texas Instruments

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−75 −50 −25
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25
50
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100 125 150 175 200
TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID =60A
G001
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
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−75 −50 −25
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TC - Case Temperature (ºC)
ID = 250uA
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 100A
TC = 125°C,I D = 100A
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Qg - Gate Charge (nC)
ID = 100A
VDS = 40V
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD19506KCS
SLPS481 – DECEMBER 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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Product Folder Links: CSD19506KCS



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