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MPC5601PEF0MLL4R датащи(PDF) 63 Page - Freescale Semiconductor, Inc |
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MPC5601PEF0MLL4R датащи(HTML) 63 Page - Freescale Semiconductor, Inc |
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63 / 95 page ![]() MPC5602P Microcontroller Data Sheet, Rev. 4.1 Freescale Semiconductor 63 3.15 Flash memory electrical characteristics 3.15.1 Program/Erase characteristics 6 20 MHz ADC clock. Specific prescaler is programmed on MC_PLL_CLK to provide 20 MHz clock to the ADC. 7 See Figure 14. Table 29. Program and erase specifications Symbol C Parameter Value Unit Min Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change pending device characterization. Initial Max2 2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage. Max3 3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values are characterized but not guaranteed. Twprogram P Word Program Time for data flash memory4 4 Actual hardware programming times. This does not include software overhead. — 30 70 500 µs Tdwprogram P Double Word Program Time for code flash memory4 — 22 50 500 µs TBKPRG P Bank Program (256 KB)4,5 5 Typical Bank programming time assumes that all cells are programmed in a single pulse. In reality some cells will require more than one pulse, adding a small overhead to total bank programming time (see “Initial Max” column). — 0.73 0.83 17.5 s P Bank Program (64 KB)4,5 —0.49 1.2 4.1 s T16kpperase P 16 KB Block Pre-program and Erase Time for code flash memory — 300 500 5000 ms 16 KB Block Pre-program and Erase Time for data flash memory — 700 800 5000 T32kpperase P 32 KB Block Pre-program and Erase Time — 400 600 5000 ms T128kpperase P 128 KB Block Pre-program and Erase Time — 800 1300 7500 ms |
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