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AS1376 датащи(PDF) 11 Page - ams AG |
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AS1376 датащи(HTML) 11 Page - ams AG |
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11 / 20 page ![]() www.austriamicrosystems.com/LODs/AS1376 Revision 1.4 10 - 19 AS1376 Datasheet - Detailed Descr i pti on 8.1 Output Voltages Standard products are factory-set with output voltages from 0.5V to 2.2V. A two-digit suffix of the part number identifies the nominal output (see Ordering Information on page 18). Non-standard devices are available. For more information contact: http://www.austriamicrosystems.com/contact 8.2 Advantages of Dual Supply Architecture vs Traditional Single Supply Approach Compared to the traditional single supply approach, employing a P-channel series pass MOSFET, the dual rail architecture ensures improved performances in a LDO when operating at very low input voltages below the threshold of the internal series power N-channel MOSFET. The extra supply voltage at VBIAS (VBIAS > VIN) ensures that the N-channel MOSFET always operates above its threshold voltage. Figure 18 shows simplified block diagrams of single supply P-channel LDO and dual rail N-channel series pass architectures. Figure 18. Single vs. Dual Supply The P-channel LDO uses a PMOS output transistor connected in a common source configuration. During regulation, the P-channel gate-source voltage moves between VIN and GND as the load demands. The dual supply approach is based on an N-channel output transistor in common drain configuration where the source is connected to the regulated output. During regulation, the N-channel gate source voltage increases from VOUT to VBIAS as the load demands. As the drain voltage is not shared with the remaining blocks of the circuit, its value can be chosen independently. The N-channel source follower design allows improved efficiency and dropout at low input voltages and provides faster load transient response. Bandgap error amplifier PMOS + - core blocks VIN Bandgap error amplifier NMOS + - core blocks VIN VBIAS VOUT VOUT Single Supply Dual Supply |
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