BAP70AM

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Product data sheet

Rev. 2 — 7 September 2010

3 of 8

NXP Semiconductors

BAP70AM

Silicon PIN diode array

7.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.9

1.1

V

reverse current

-

-

< 100

nA

diode capacitance

see Figure 1; f = 1 MHz;

-

570

-

fF

-

400

-

fF

-

270

-

fF

-

200

250

fF

diode forward resistance

see Figure 2; f = 100 MHz;

-

77

100

Ω

-

40

50

Ω

-

5.4

7

Ω

-

1.4

1.9

Ω

τ

L

charge carrier life time

-1.25

-

μs

series inductance

-

0.6

-

nH

Fig 1.

Diode capacitance as a function of reverse

voltage; typical values

Fig 2.

Diode forward resistance as a function of

forward current; typical values

020

15

510

001aaa461

400

300

500

600

(fF)

200

10

1

mce007

110

(

Ω)