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AM28F020 датащи(PDF) 27 Page - Advanced Micro Devices |
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AM28F020 датащи(HTML) 27 Page - Advanced Micro Devices |
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27 / 35 page ![]() Am28F020 27 AC Characteristics—Write (Erase/Program) Operations Notes: 1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC Characteristics for Read Only operations. 2. Maximum pulse widths not required because the on-chip program/erase stop timer will terminate the pulse widths internally on the device. 3. Chip Enable-Controlled Writes: Write operations are driven by the valid combination of Chip Enable (CE#) and Write Enable (WE#). In systems where CE# defines the Write Pulse Width (within a longer WE# timing waveform) all setup, hold and inactive WE# times should be measured relative to the CE# waveform. 4. Not 100% tested. Parameter Symbols Am28F020 Speed Options JEDEC Standard Description -70 -90 -120 -150 -200 Unit tAVAV tWC Write Cycle Time (Note 4) Min 70 90 120 150 200 ns tAVWL tAS Address Setup Time Min 0 0 0 0 0 ns tWLAX tAH Address Hold Time Min 45 45 50 60 75 ns tDVWH tDS Data Setup Time Min 45 45 50 50 50 ns tWHDX tDH Data Hold Time Min 10 10 10 10 10 ns tWHGL tWR Write Recovery Time Before Read Min 6 6 6 6 6 µs tGHWL Read Recovery Time Before Write Min 0 0 0 0 0 µs tELWL tCS CE # Setup Time Min 0 0 0 0 0 ns tWHEH tCH CE # Hold Time Min 0 0 0 0 0 ns tWLWH tWP Write Pulse Width Min 45 45 50 60 60 ns tWHWL tWPH Write Pulse Width High Min 20 20 20 20 20 ns tWHWH1 Duration of Programming Operation (Note 2) Min 10 10 10 10 10 µs tWHWH2 Duration of Erase Operation (Note 2) Min 9.5 9.5 9.5 9.5 9.5 ms tVPEL VPP Setup Time to Chip Enable Low (Note 4) Min 100 100 100 100 100 ns tVCS VCC Setup Time to Chip Enable Low (Note 4) Min 50 50 50 50 50 µs tVPPR VPP Rise Time (Note 4) 90% VPPH Min 500 500 500 500 500 ns tVPPF VPP Fall Time (Note 4) 10% VPPL Min 500 500 500 500 500 ns tLKO VCC < VLKO to Reset (Note 4) Min 100 100 100 100 100 ns |
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