PEMB2_PUMB2

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 17 November 2011

6 of 14

NXP Semiconductors

PEMB2; PUMB2

PNP/PNP resistor-equipped transistors; R1 = 47 k

, R2 = 47 k

7.

Characteristics

[1]

Characteristics of built-in transistor

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

collector-base cut-off

current

-

-

100 nA

collector-emitter cut-off

current

-

-

1

A

--

5

A

emitter-base cut-off

current

-

-

90

A

DC current gain

80

-

-

collector-emitter

saturation voltage

-

-

150 mV

off-state input voltage

1.2

0.8

V

on-state input voltage

3

1.6

-

V

R1

bias resistor 1 (input)

33

47

61

k



R2/R1

bias resistor ratio

0.8

1

1.2

collector capacitance

f=1MHz

--

3

pF

transition frequency

f=100MHz

[1]

-

180

-

MHz