PEMB2_PUMB2

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 17 November 2011

3 of 14

NXP Semiconductors

PEMB2; PUMB2

PNP/PNP resistor-equipped transistors; R1 = 47 k

, R2 = 47 k

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

10

V

input voltage

positive

-

+10

V

negative

-

40

V

output current

-

100

mA

peak collector current

single pulse;

-

100

mA

total power dissipation

PEMB2 (SOT666)

[1][2] -200

mW

PUMB2 (SOT363)

[1] -200

mW

Per device

total power dissipation

PEMB2 (SOT666)

[1][2] -300

mW

PUMB2 (SOT363)

[1] -300

mW

junction temperature

-

150

C

ambient temperature

65

+150

C

storage temperature

65

+150

C