14

Pout

Freq.

V

JC

Package

Part

Class of

(W)

(MHz)

(V)

Style

Number

Operation

90

120

150V/450V

0.76

TO-247

ARF449AG/BG

C-E

100

100

125V/500V

0.70

TO-247

ARF463AG/BG

A-E

100

125V/500V

0.70

TO-247

ARF463AP1G/BP1G

A-E

140

65

250V/900V

0.55

TO-247

ARF446G

C-E

65

250V/900V

0.55

TO-247

ARF447G

C-E

65

150V/450V

0.55

TO-247

ARF448AG/BG

C-E

150

65

125V/500V

0.50

TO-247

ARF460AG/BG

A-E

65

250V/1kV

0.50

TO-247

ARF461AG/BG

A-E

60

300V/1.2kV

0.50

TO-247

ARF465AG/BG

A-E

150

150

165V/500V

0.60

M174

ARF521

A-E

300

150

165V/500V

0.35

M208

ARF473

A-E

150

165V/500V

0.31

T3A

ARF475FL

A-E

150

165V/500V

0.31

T3C

ARF476FL

A-E

45

200V/1kV

0.35

TO-264

ARF466AG/BG

A-E

300

45

200V/1kV

0.13

T3

ARF466FL

A-E

400

65

165V/500V

0.18

T3C

ARF477FL

A-E

750

25

250V/1000V

0.13

T2

ARF1519

A-E

750

40

125V/500V

0.12

T1

ARF1500

A-E

40

250V/1kV

0.12

T1

ARF1501

A-E

40

300V/1.2kV

0.12

T1

ARF1505

A-E

750

40

400V/1000V

0.12

T1

ARF1510

D

40

380V/500V

0.12

T1

ARF1511

D

Datasheets available on www.microsemi.com

All Products RoHS Compliant

D

S

S

G

G

S

S

S

S

The ARF family of RF Power MOSFETs are optimized for applications requiring frequencies as high as 150MHz and operating voltages as

high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining

Microsemi's high voltage MOSFET technology with RF specific die geometries.

Why Higher Voltage? Higher V

At 125V, the load impedance is 50 ohms. The higher impedance allows simpler transformers and combiners. Paralleled devices can still

operate into reasonable and convenient impedances. The increased operating voltage also lowers the DC current required for any given

power output increasing efficiency and reducing the size, weight and cost of other system components.

TO-247

TO-264

T1

T2

T3A

T3B

M208

M113 / M174 / M177

T4

T2B

T2 Backside

T11

High Voltage RF MOSFETs

T3C

T3

Drivers and Driver-RF MOSFET Hybrids

The DRF1200/01/02/03 Hybrids integrates Driver, bypass capacitors and RF MOSFETS into a single package. Integration

maximizes amplifier performance by minimizing transmission line parasitics between the Driver and MOSFET. The DRF1300 or DRF1301

has two independent channels, each containing a Driver and RF MOSFET in a push pull configuration. The DRF1400A and B are half

bridge hybrids with symmetrically orientated leads so that the two can easily be configured into a full bridge converter. All DRF parts

feature a proprietary Anti-ring function to eliminate cross conduction in a Bridge or push-pull topologies. All DRF parts can be externally

selected in either an inverting or non-inverting configuration.

P

D

Freq.

V

JC

Package

Part

Class of

Description

(W)

(MHz)

(V)

Style

Number

Operation

600

30

15V/1000V

1.00

T2B

DRF1200

D-E

Driver and High Voltage RF MOSFET

1060

30

15V/1000V

.025

T2B

DRF1201

D-E

Driver and High Voltage/High Power RF MOSFET

1060

30

15V/500V

.025

T2B

DRF1202

D-E

Driver and High Power RF MOSFET

600

30

15V/1000V

0.09

T2B

DRF1203

D-E

Driver and High Voltage RF MOSFET

1000

30

15V/500V

0.06

T4

DRF1300

D-E

2 Drivers/RF MOSFETs in Push-Pull Configuration

1000

30

15V/1000

0.06

T4

DRF1301

D-E

2 Drivers/RF MOSFETs in Push-Pull Configuration

1500

30

15V/500

0.06

T4

DRF1400

D-E

2 Drivers/RF MOSFETs in a H Bridge Configuration