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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APT15GT120BRG датащи(PDF) 9 Page - Microsemi Corporation |
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APT15GT120BRG датащи(HTML) 9 Page - Microsemi Corporation |
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9 / 44 page  9 Datasheets available on www.microsemi.com All Products RoHS Compliant BV (DSS) Volts R DS(ON) Max I D MOSFET Part # FREDFET Part # Package Style 1200 4.700 3.5 APT1204R7KFLLG T0-220 4.700 3.5 APT1204R7BFLLG T0-247 or D3 1.400 9 APT1201R4BFLLG T0-247 0.670 18 APT12067B2LLG T-MAX® 0.670 17 APT12067JLL ISOTOP® 0.570 22 APT12057B2LLG T-MAX® 0.570 19 APT12057JLL ISOTOP® 1000 0.900 12 APT10090BLLG T0-247 0.780 14 APT10078BLLG T0-247 or D3 0.450 23 APT10045B2LLG T-MAX® or TO-264 0.450 21 APT10045JLL ISOTOP® 0.350 28 APT10035B2LLG T-MAX® 0.350 25 APT10035JLL ISOTOP® 0.260 38 APT10026L2FLLG TO-264 MAX 0.260 30 APT10026JLL APT10026JFLL ISOTOP® 0.210 37 APT10021JLL APT10021JFLL ISOTOP® 0.140 52 APT8014L2LLLG APT8014L2FLLG TO-264 MAX 0.110 51 APT8011JLL APT8011JFLL T-MAX™ or T0-264 800 0.200 38 APT8020B2LL T-MAX® 0.200 33 APT8020JLL ISOTOP® or D3 or T/R 500 0.140 35 APT5014BLLG TO-247 0.100 46 APT5010B2LLG APT5010B2FLLG T-MAX® or TO-264 0.065 67 APT50M65B2LLG APT50M65B2FLLG T-MAX® or TO-264 0.065 58 APT50M65JLLG APT50M65JFLLG ISOTOP® 0.075 51 APT50M75JLL APT50M75JFLL ISOTOP® 0.075 57 APT50M75B2LLG T-MAX® or TO-264 0.050 71 APT50M50JLL ISOTOP® 0.038 88 APT50M38JLL ISOTOP® Series Gate Resistance (Rg) <0.1 ohm Fast switching, uniform signal propagation Tr and Tf times of <10ns Pulse power applications Industry's Lowest Gate Charge Fast switching, reduced gate drive power ISOTOP®[J] SOT-227 (ISOLATED BASE) TO-247[B] T-MAX®[B2] FOR 250 kHz - 2 MHz SWITCHING APPLICATIONS Ultrafast, Low Gate Charge MOSFETs FEATURES: BENEFITS: The Ultrafast, Low Gate Charge MOSFET family combines the lowest gate charge available in the industry with Microsemi’s proprietary self-aligned aluminum metal gate structure. The re- sult is a MOSFET capable of extremely fast switching speeds and very low switching losses. The metal gate structure and the layout of these chips provide an internal series gate resistance (EGR) an order of magnitude lower than competitive devices built with a polysilicon gate. These devices are ideally suited for high frequency and pulsed high voltage applications. Typical Applications: |
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