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STGF20H60DF датащи(PDF) 10 Page - STMicroelectronics

номер детали STGF20H60DF
подробное описание детали  600 V, 20 A high speed trench gate field-stop IGBT
PDF  22 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF20H60DF датащи(HTML) 10 Page - STMicroelectronics

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Electrical characteristics
STGB20H60DF, STGF20H60DF, STGP20H60DF
10/22
DocID023740 Rev 4
Figure 18. Diode VF vs. forward current
Figure 19. Gate charge vs. gate-emitter voltage
Figure 20. Capacitance variations vs. VCE
Figure 21. Switching losses vs. gate resistance
Figure 22. Switching losses vs. collector
current
Figure 23. Switching losses vs. temperature
VF
1.9
1.5
1.1
10
50
IF(A)
(V)
30
TJ= -40 °C
20
40
2.3
TJ= 25 °C
TJ= 175 °C
AM16293V1
VGE
8
4
0
0
Qg(nC)
(V)
80
VCC= 400 V
IC= 20 A
40
120
12
16
AM16294V1
C
1000
100
10
0.1
VCE(V)
(pF)
10
Coes
1
Cies
Cres
AM16295V1
E
550
450
350
0
RG(
Ω)
(µJ)
20
EOFF
10
EON
30
40
650
750
VCC= 400 V, VGE = 15V,
IC = 20 A, TJ = 175°C
AM16296V1
E
600
400
200
10
IC(A)
(µJ)
20
EOFF
EON
30
800
1000
VCC= 400 V, VGE = 15V,
Rg = 10
Ω, TJ = 175°C
AM162961V1
E
400
300
200
25
TJ(°C)
(µJ)
75
EOFF
EON
125
VCC= 400 V, VGE = 15V,
Rg = 10
Ω, IC = 20 A
AM16297V1



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