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STGF20H60DF датащи(PDF) 1 Page - STMicroelectronics |
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STGF20H60DF датащи(HTML) 1 Page - STMicroelectronics |
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1 / 22 page ![]() This is information on a product in full production. June 2013 DocID023740 Rev 4 1/22 22 STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Figure 1. Internal schematic diagram Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. TO-220 D²PAK 1 2 3 TAB 1 3 TAB TO-220FP 1 2 3 C (2, TAB) E (3) G (1) Table 1. Device summary Order codes Marking Packages Packaging STGB20H60DF GB20H60DF D²PAK Tape and reel STGF20H60DF GF20H60DF TO-220FP Tube STGP20H60DF GP20H60DF TO-220 Tube www.st.com |
Аналогичный номер детали - STGF20H60DF |
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Аналогичное описание - STGF20H60DF |
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