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STH310N10F7-2 датащи(PDF) 5 Page - STMicroelectronics

номер детали STH310N10F7-2
подробное описание детали  N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STH310N10F7-2 датащи(HTML) 5 Page - STMicroelectronics

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STH310N10F7-2, STH310N10F7-6
Electrical characteristics
19
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
180
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
(pulsed)
-720
A
V
SD
(2)
2.
Pulse duration = 300μs, duty cycle 1.5%
Forward on voltage
I
SD
=60 A, V
GS
=0
-
1.5
V
t
rr
Reverse recovery time
I
SD
=180 A,
di/dt = 100 A/μs,
V
DD
=80 V, Tj=150°C
(see
Figure 15)
-85
ns
Q
rr
Reverse recovery charge
-
200
nC
I
RRM
Reverse recovery current
-
4.7
A



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