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STH310N10F7-2 датащи(PDF) 3 Page - STMicroelectronics

номер детали STH310N10F7-2
подробное описание детали  N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STH310N10F7-2 датащи(HTML) 3 Page - STMicroelectronics

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STH310N10F7-2, STH310N10F7-6
Electrical ratings
19
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage
100
V
V
GS
Gate-source voltage
± 20
V
I
D
(1)
1.
Current limited by package.
Drain current (continuous) at T
C
= 25°C
180
A
I
D
(1)
Drain current (continuous) at T
C
=100°C
120
A
I
DM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
720
A
P
TOT
Total dissipation at T
C
= 25°C
315
W
Derating factor
2.1
W/°C
E
AS
(3)
3.
Starting T
J
=25°C, I
D
=60 A, V
DD
=50 V
Single pulse avalanche energy
(T
J
= 25 °C, L=0.55 mH, I
as
=65 A )
1J
T
j
T
stg
Operating junction temperature
storage temperature
- 55 to 175
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case
0.48
°C/W
R
thj-pcb
(1)
1.
When mounted on 1 inch² FR-4 board, 2oz Cu
Thermal resistance junction-pcb max
35
°C/W



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