IRFS4229PbF

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5

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 15. Threshold Voltage vs. Temperature

Fig 14. Maximum Avalanche Energy Vs. Temperature

Fig 13. On-Resistance Vs. Gate Voltage

Fig 16. Typical Repetitive peak Current vs.

Case temperature

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

0.00

0.10

0.20

0.30

0.40

TJ = 25°C

TJ = 125°C

ID = 26A

25

50

75

100

125

150

175

Starting TJ, Junction Temperature (°C)

0

100

200

300

400

500

600

I D

TOP

7.4A

13A

BOTTOM

26A

-75 -50 -25

0

25

50

75 100 125 150 175

TJ , Temperature ( °C )

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

ID = 250µA

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

25

50

75

100

125

150

175

Case Temperature (°C)

0

20

40

60

80

100

120

140

ton= 1µs

Duty cycle = 0.25

Half Sine Wave

Square Pulse

Ri (°C/W)

τι (sec)

0.080717 0.000052

0.209555 0.001021

0.159883 0.007276

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

τ

τ

C

Ci=

τi/Ri

Ci=

τi/Ri