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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFS4229PBF датащи(PDF) 2 Page - International Rectifier |
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IRFS4229PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFS4229PbF 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 210 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 42 48 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 200 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 83 ––– ––– S Qg Total Gate Charge ––– 72 110 Qgd Gate-to-Drain Charge ––– 26 ––– td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 31 ––– td(off) Turn-Off Delay Time ––– 30 ––– tf Fall Time ––– 21 ––– tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse Ciss Input Capacitance ––– 4560 ––– Coss Output Capacitance ––– 390 ––– Crss Reverse Transfer Capacitance ––– 100 ––– Coss eff. Effective Output Capacitance ––– 290 ––– LD Internal Drain Inductance Between lead, LS Internal Source Inductance Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energyd mJ EAR Repetitive Avalanche Energy mJ VDS(Avalanche) Repetitive Avalanche Voltageà V IAS Avalanche Current Ãd A Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 190 290 ns Qrr Reverse Recovery Charge ––– 840 1260 nC A ––– ––– ––– ––– ––– ––– ––– ––– 4.5 7.5 µA nA nC ns 45 180 ––– 790 ––– ––– 1390 ––– Typ. µJ 33 26 ––– ––– 300 ––– Max. ƒ = 1.0MHz, ––– 130 and center of die contact pF nH TJ = 25°C, IF = 26A, VDD = 50V di/dt = 100A/µs e TJ = 25°C, IS = 26A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 26A e VDS = VGS, ID = 250µA VDS = 250V, VGS = 0V VGS = 0V, VDS = 0V to 200V VDS = 250V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 0V L = 220nH, C= 0.3µF, VGS = 15V MOSFET symbol VDS = 25V, ID = 26A VDD = 125V, ID = 26A, VGS = 10Ve Conditions VDD = 200V, VGS = 15V, RG= 4.7Ω VDS = 200V, RG= 4.7Ω, TJ = 25°C L = 220nH, C= 0.3µF, VGS = 15V VDS = 200V, RG= 4.7Ω, TJ = 100°C VDS = 25V VDD = 125V, VGS = 10VÃe ID = 26A RG = 2.4Ω See Fig. 22 |
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