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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TLP131 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TLP131 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 9 page  TLP131 2007-10-01 3 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector −emitter breakdown voltage V(BR)CEO IC = 0.5mA 80 ― ― V Emitter −collector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V Collector −base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter −base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 48V ― 10 100 nA collector dark current ICEO VCE = 48V,Ta = 85°C ― 2 50 μA Collector dark current ICER VCE = 48V,Ta = 85°C RBE = 1MΩ ― 0.5 10 μA Collector dark current ICBO VCB = 10V ― 0.1 ― nA DC forward current gain hFE VCE = 5V,IC = 0.5mA ― 400 ― ― Capacitance (collector to emitter) CCE V = 0, f = 1MHz ― 10 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit 50 ― 600 Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V Rank GB 100 ― 600 % ― 60 ― Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB 30 ― ― % Base photo −current IPB IF = 5mA,VCB = 5V ― 10 ― μA IC = 2.4 mA, IF = 8 mA ― ― 0.4 ― 0.2 ― Collector −emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB ― ― 0.4 V Off −state collector current IC (off) IF = 0.7mA, VCE = 48 V ― 1 10 μA |
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