TLP131

2007-10-01

2

Current Transfer Ratio

Current Transfer

Ratio (%)

Type

Classification

Min.

Max.

Marking Of Classification

(None)

50

600

BLANK, Y, Y

Rank Y

50

150

Y, Y

■

Rank GR

100

300

G, G

■

TLP131

Rank GB

100

600

G, G

Note: Application type name for certiffication test,please use standard product type name,i.e.

TLP131(GB): TLP131

Characteristic

Symbol

Rating

Unit

Forward current

50

mA

Forward current derating (Ta≥53°C)

−0.7

mA / °C

Peak forward current (100μs pulse,100pps)

1

A

Reverse voltage

5

V

Junction temperature

125

°C

Collector

−emitter voltage

80

V

Collector

−base voltage

80

V

Emitter

−collector voltage

7

V

Emitter

−base voltage

7

V

Collector current

50

mA

Peak collector current (10ms pulse,100pps)

100

mA

Power dissipation

150

mW

Power dissipation derationg (Ta ≥ 25°C)

−1.5

mW / °C

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Operating temperature range

−55~100

°C

Lead soldering temperature (10s)

260

°C

Total package power dissipation

200

mW

Total package power dissipation derating (Ta ≥ 25°C)

−2.0

mW / °C

Isolation voltage (AC, 1min., RH≤ 60%)

(Note 1)

3750

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted

together.