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TDA1562ST датащи(PDF) 13 Page - NXP Semiconductors |
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TDA1562ST датащи(HTML) 13 Page - NXP Semiconductors |
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13 / 24 page ![]() 2003 Feb 12 13 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD AC CHARACTERISTICS VP = 14.4 V; RL =4 Ω; Rs =0 Ω; f = 1 kHz; Tamb =25 °C; measurements in accordance with Fig.9; unless otherwise specified. Notes 1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors. 2. The low frequency gain roll-off is determined by the value of the input coupling capacitors. 3. Supply voltage ripple rejection is measured across RL; ripple voltage Vripple(max) = 2 V (p-p). 4. Common mode rejection ratio is measured across RL; common mode voltage Vcm(max) = 2 V (p-p). CMMR (dB) = differential gain (Gv) + common mode attenuation (αcm). Test set-up according to Fig.10; mismatch of input coupling capacitors excluded. 5. Input signal rejection ratio is measured across RL; input voltage Vi(max) = 2 V (p-p). ISSR (dB) = different gain (Gv) + mute attenuation (αm). 6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz. 7. Noise output voltage is independent of source impedance Rs. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Po output power class-B; THD = 10% 16 19 − W class-H; THD = 10% 60 70 − W class-H; THD = 0.5% 45 55 − W fro(h)(P) high frequency power roll-off Po (−1 dB); THD = 0.5%; note 1 − 20 − kHz THD total harmonic distortion Po =1W − 0.03 − % Po =20W − 0.06 − % DDD active − 2.1 − % Gv voltage gain 25 26 27 dB fro(h)(G) high frequency gain roll-off Gv (−1 dB); note 2 20 −− kHz Z i(dif) differential input impedance 90 150 210 k Ω SVRR supply voltage ripple rejection on and mute; note 3 55 63 − dB standby; note 3 − 90 − dB CMRR common mode rejection ratio on; note 4 56 80 − dB ISRR input signal rejection ratio mute; note 5 80 100 − dB Vn(o) noise output voltage on; note 6 − 100 150 µV mute; notes 6 and 7 − 60 −µV |
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