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TDA1562ST датащи(PDF) 9 Page - NXP Semiconductors

номер детали TDA1562ST
подробное описание детали  70 W high efficiency power amplifier with diagnostic facility
PDF  24 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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TDA1562ST датащи(HTML) 9 Page - NXP Semiconductors

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2003 Feb 12
9
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
Fig.5 Behaviour as a function of temperature.
handbook, full pagewidth
class-H
maximum output
voltage swing
diagnostic
output
status I/O: high
status I/O: open
MGL266
class-B
0
HIGH
LOW
status I/O
output
HIGH
MID
LOW
120
145
Tj (°C)
150
160
100
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 Ω).
2. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device.
Tj =Tc +P × Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the
allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 60747-1).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage
operating; note 1
18
V
non-operating
30
V
load dump; tr > 2.5 ms; t = 50 ms
45
V
IOSM
non-repetitive peak output current
10
A
IORM
repetitive peak output current
8A
Vsc
short-circuit safe voltage
18
V
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
−°C
Tj
junction temperature
note 2
150
°C
Ptot
total power dissipation
60
W



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