QID3320002

Dual IGBT HVIGBT Module

200 Amperes/3300 Volts

3

01/13 Rev. 8

Electrical Characteristics,

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

—

23

—

nF

Output Capacitance

—

1.5

—

nF

Reverse Transfer Capacitance

—

0.7

—

nF

Turn-on Delay Time

—

800

—

ns

Rise Time

—

160

—

ns

Turn-off Delay Time

—

3200

—

ns

Fall Time

—

1300

—

ns

Turn-on Switching Energy

—

335

—

mJ/P

Turn-off Switching Energy

—

275

—

mJ/P

Diode Reverse Recovery Time**

—

500

—

ns

Diode Reverse Recovery Charge**

—

180*

—

µC

Diode Reverse Recovery Energy

—

190

—

mJ/P

Stray Inductance (C1-E2)

—

60

—

nH

Lead Resistance Terminal-Chip

—

0.8

—

mΩ

Thermal and Mechanical Characteristics,

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case***

Per IGBT

—

0.074

—

°C/W

Thermal Resistance, Junction to Case***

Per FWDi

—

0.11

—

°C/W

Contact Thermal Resistance, Case to Fin

Per Module,

—

0.018

—

°C/W

Comparative Tracking Index

CTI

600

—

—

Clearance Distance in Air (Terminal to Base)

35.0

—

—

mm

Creepage Distance Along Surface

64

—

—

mm

(Terminal to Base)

Clearance Distance in Air

19

—

—

mm

(Terminal to Terminal)

Creepage Distance Along Surface

54

—

—

mm

(Terminal to Terminal)

*Pulse width and repetition rate should be such that device junction temperature rise is negligible.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).