QID3320002 datasheet(2/6 Pages) POWEREX

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QID3320002

Dual IGBT HVIGBT Module

200 Amperes/3300 Volts

01/13 Rev. 8

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

Absolute Maximum Ratings,

Tj = 25 °C unless otherwise specified

Ratings

Symbol

QID3320002

Units

Junction Temperature

-40 to 150

°C

Storage Temperature

Tstg

-40 to 125

°C

Collector-Emitter Voltage (VGE = 0V)

VCES

3300

Volts

Gate-Emitter Voltage (VCE = 0V)

VGES

±20

Volts

Collector Current (TC = 102°C)

200

Amperes

Collector Current (TC = 25°C)

370

Amperes

Peak Collector Current (Pulse)

ICM

400*

Amperes

Diode Forward Current** (TC = 99°C)

200

Amperes

Diode Forward Surge Current** (Pulse)

IFM

400*

Amperes

I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C)

I2t

kA2sec

Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C)

1780

Watts

Mounting Torque, M6 Terminal Screws

—

in-lb

Mounting Torque, M6 Mounting Screws

—

in-lb

Module Weight (Typical)

—

900

Grams

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)

Viso

7.7

kVolts

Partial Discharge

Qpd

(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))

Maximum Short-Circuit Pulse Width,

tpsc

µs

(VCC ≤ 2500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C)

Electrical Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

—

2.0

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

—

0.5

µA

Gate-Emitter Threshold Voltage

VGE(th)

IC = 15mA, VCE = 10V

5.5

6.0

6.5

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 200A, VGE = 15V, Tj = 25°C

—

2.7***

3.3

Volts

IC = 200A, VGE = 15V, Tj = 125°C

—

3.4

4.0

Volts

IC = 200A, VGE = 15V, Tj = 150°C

—

3.6

—

Volts

Total Gate Charge

VCC = 1800V, IC = 170A, VGE = 15V

—

1.8

—

µC

Emitter-Collector Voltage**

VEC

IE = 200A, VGE = 0V, Tj = 25°C

—

2.3

3.0

Volts

IE = 200A, VGE = 0V, Tj = 125°C

—

2.45

—

Volts

IE = 200A, VGE = 0V, Tj = 150°C

—

2.55

—

Volts

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

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