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2SC5338 датащи(PDF) 5 Page - Renesas Technology Corp

номер детали 2SC5338
подробное описание детали  NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5338 датащи(HTML) 5 Page - Renesas Technology Corp

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Data Sheet P10940EJ2V0DS
3
2SC5338
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
Mounted on Ceramic Substrate
(16 cm
2
× 0.7 mm (t) )
2.0
1.0
0
50
100
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
2.0
3.0
0.3
1.0
0.5
13
5
10
20
30
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
1
10
0.1
1.0
1.2
0.2
0.4
0.6
0.8
VCE = 10 V
5 V
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
120
20
40
60
0
2
4
6
8
10
12
14
IB = 0.7 mA
0.6 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
100
50
10
100
0.1
1
10
1 000
VCE = 10 V
5 V
f = 1 GHz
Collector Current IC (mA)
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
10
5
0
5
7
10
20
50 70 100
VCE = 10 V
5 V



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