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2SC5338 датащи(PDF) 4 Page - Renesas Technology Corp |
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2SC5338 датащи(HTML) 4 Page - Renesas Technology Corp |
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4 / 10 page ![]() Data Sheet P10940EJ2V0DS 2 2SC5338 ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 20 V, IE = 0 mA – – 1.5 µA Emitter Cut-off Current IEBO VBE = 2 V, IC = 0 mA – – 1.5 µA DC Current Gain hFE Note 1 VCE = 5 V, IC = 50 mA 50 – 250 – RF Characteristics Gain Bandwidth Product fT VCE = 5 V, IC = 50 mA – 6.0 – GHz Insertion Power Gain S21e2 VCE = 5 V, IC = 50 mA, f = 1 GHz 8.5 10 – dB Noise Figure NF VCE = 5 V, IC = 50 mA, f = 1 GHz – – 3.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 5 V, IE = 0 mA, f = 1 MHz – 1.0 2.0 pF 2nd Order Intermoduration Distortion IM2 VCE = 5 V – −55 – dB IC = 50 mA, Vin = 105 dB µV/75 Ω, f = 190 − 90 MHz VCE = 10 V −63 – 3rd Order Intermoduration Distortion IM3 VCE = 5 V – −76 – dB IC = 50 mA, Vin = 105 dB µV/75 Ω, f = 2 × 190 − 200 MHz VCE = 10 V – −83 – Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank SH SF SE Marking SH SF SE hFE Value 50 to 100 80 to 160 125 to 250 |
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