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STF18N55M5 датащи(PDF) 5 Page - STMicroelectronics

номер детали STF18N55M5
подробное описание детали  N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220
PDF  22 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF18N55M5 датащи(HTML) 5 Page - STMicroelectronics

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STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Electrical characteristics
Doc ID 17078 Rev 2
5/22
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(off)
tr
tc
tf
Turn-off delay time
Rise time
Cross time
Fall time
VDD = 400 V, ID = 9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18, Figure 23)
-
29
9.5
23
13
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
13
52
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 13 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 13 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 20)
-
238
2.8
23.5
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 13 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
-
278
3.3
24
ns
µC
A



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