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STF18N55M5 датащи(PDF) 8 Page - STMicroelectronics

номер детали STF18N55M5
подробное описание детали  N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220
PDF  22 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF18N55M5 датащи(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
8/22
Doc ID 17078 Rev 2
Figure 14.
Normalized gate threshold voltage
vs temperature
Figure 15.
Normalized on resistance vs
temperature
Figure 16.
Switching losses vs gate resistance
(1)
Figure 17.
Normalized BVDSS vs temperature
1.
Eon including reverse recovery of a SiC diode
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
ID=250µA
AM08670v1
RDS(on)
1.3
0.7
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
ID=6.5A
VGS=10V
1.1
0.9
2.1
1.5
1.9
1.7
AM08671v1
E
60
40
20
0
0
20
RG(
Ω)
(
μJ)
10
30
80
100
120
40
ID=9A
VCL=400V
Eon
Eoff
VGS=10V
140
AM08673v1
BVDSS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.93
0.95
0.97
0.99
1.01
1.03
1.05
1.07
ID=1mA
AM08672v1



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