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2SC5509 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали 2SC5509
подробное описание детали  NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5509 датащи(HTML) 3 Page - Renesas Technology Corp

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2SC5509
Chapter Title
R09DS0056EJ0300 Rev.3.00
Page 3 of 8
Mar 5, 2013
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Thermal/DC Characteristics
VCE = 2 V
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
40
30
20
10
0
0.4
0.2
0.6
0.8
1.0
1.2
400
350
300
250
200
150
190
330
100
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
When case temperature
is specified
Mounted on
ceramic substrate
(15
× 15 mm, t = 0.6 mm)
Free Air
200
100
150
50
0
0.01
0.1
0.001
1
10
100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
150
50
100
02
14
35
200 A
μ
100 A
μ
300 A
μ
400 A
μ
500 A
μ
600 A
μ
700 A
μ
800 A
μ
900 A
μ
1 000 A
μ
IB = 1 100
A
μ
Capacitance/fT Characteristics
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
0.60
0.80
0.20
0.40
0
1.0
3.0
4.0
2.0
5.0
VCE = 3 V
f = 2 GHz
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
0
10
100
1
1 000
Remark The graphs indicate nominal characteristics.



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