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2SC5509 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SC5509
подробное описание детали  NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5509 датащи(HTML) 4 Page - Renesas Technology Corp

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2SC5509
Chapter Title
R09DS0056EJ0300 Rev.3.00
Page 4 of 8
Mar 5, 2013
Gain Characteristics
VCE = 2 V
IC = 50 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
20
25
30
5
10
15
0
0.1
1.0
10.0
MAG
MSG
|S21e|
2
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
0
1
10
100
MAG
MSG
|S21e|
2
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
15
20
25
10
5
0
1
10
100
MAG
MSG
|S21e|
2
Output Characteristics
VCE = 2 V
f = 1 GHz
25
20
15
10
5
0
–5
150
25
50
75
125
100
0
–15
0
–5
–10
5
10
15
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Pout
IC
VCE = 2 V
f = 2 GHz
25
20
15
10
5
0
–5
150
25
50
75
125
100
0
–15
0
–5
–10
5
10
15
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Pout
IC
Remark The graphs indicate nominal characteristics.



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