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MMBZ18VCL датащи(PDF) 5 Page - NXP Semiconductors |
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MMBZ18VCL датащи(HTML) 5 Page - NXP Semiconductors |
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5 / 15 page ![]() MMBZXVCL_MMBZXVDL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 3 September 2008 5 of 15 NXP Semiconductors MMBZxVCL; MMBZxVDL series Double ESD protection diodes for transient overvoltage suppression 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point at pin 3. Table 8. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 8 kV Fig 1. 10/1000 µs pulse waveform according to IEC 61643-321 Fig 2. ESD pulse waveform according to IEC 61000-4-2 tp (ms) 0 4.0 3.0 1.0 2.0 006aab319 50 100 150 IPP (%) 0 50 % IPP; 1000 µs 100 % IPP; 10 µs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns Table 9. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 350 K/W [2] - - 280 K/W Rth(j-sp) thermal resistance from junction to solder point [3] --60 K/W |
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