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STH180N10F3-2 датащи(PDF) 7 Page - STMicroelectronics

номер детали STH180N10F3-2
подробное описание детали  N-channel 100 V, 3.9 milliohm, 180 A, H2PAK-2 STripFET III Power MOSFET
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH180N10F3-2 датащи(HTML) 7 Page - STMicroelectronics

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STH180N10F3-2
Electrical characteristics
Doc ID 019060 Rev 1
7/15
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage
vs temperature
Figure 11.
Normalized on resistance vs
temperature
Figure 12.
Source-drain diode forward
characteristics
VGS
6
4
2
0
0
20
Qg(nC)
(V)
80
8
40
60
10
VDD=50V
ID=120A
100
12
120 140
AM08620v1
C
15000
10000
5000
0
0
40
VDS(V)
(pF)
20
20000
60
Ciss
Coss
Crss
80
100
AM08621v1
VGS(th)
0.9
0.7
0.5
0.3
-75
TJ(°C)
(norm)
-25
1.1
75
25
125
175
1.3
ID=250µA
AM08622v1
RDS(on)
1.1
0.9
0.7
0.5
-75
TJ(°C)
(norm)
-25
75
25
125
175
1.3
1.5
1.7
1.9
2.1
ID=60A
VGS=10V
AM08623v1
VSD
0
40
ISD(A)
(V)
20
100
60
80
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ=-55°C
TJ=175°C
TJ=25°C
120
AM08624v1



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