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STH180N10F3-2 датащи(PDF) 6 Page - STMicroelectronics |
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STH180N10F3-2 датащи(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Electrical characteristics STH180N10F3-2 6/15 Doc ID 019060 Rev 1 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance for H²PAK ID 100 10 1 0.1 0.1 1 VDS(V) 10 (A) Oper ation in thi s are a i s Limited by m ax R DS (on) 100µs 1ms 10ms Tj=175°C Tc=25°C Single pulse AM08625v1 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) 10 -2 10 -1 K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c δ=tp/τ tp τ Single pulse δ=0.5 280tok ID 200 150 50 0 0 2 VDS(V) 4 (A) 1 3 5 250 300 5V 6V 7V VGS=10V 67 8 100 350 AM08616v1 ID 200 150 50 0 0 4 VGS(V) 8 (A) 2 6 9 250 300 1 3 5 7 VDS=2V 100 350 AM08617v1 BVDSS -75 TJ(°C) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 175 ID=1mA AM08618v1 RDS(on) 3.8 3.7 3.6 0 40 ID(A) ( Ω) 20 60 3.9 4.0 VGS=10V 100 80 120 4.1 4.2 140 160 180 AM08626v1 |
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